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| 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications * * * * * 4 V gate drive Low drain-source ON resistance: RDS (ON) = 13.5 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 20 35 105 30 68 35 3.0 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.16 62.5 Unit C/W C/W Note 1: Please use devises on condition that the channel temperature is below 150C. Note 2: VDD = 50 V, Tch = 25C, L = 40 mH, RG = 25 W, IAR = 35 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution 1 2002-08-12 2SK3236 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 18 A VGS = 10 V, ID = 18 A VDS = 10 V, ID = 18 A Min 3/4 3/4 60 1.3 3/4 3/4 21 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 22 13.5 42 2300 220 370 9 Max 10 100 3/4 2.5 36 20 3/4 3/4 3/4 pF Unit mA mA V V mW S 3/4 10 V VGS 0V 4.7 9 ID = 18 A VOUT RL = 1.67 W 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 Turn-ON time Switching time Fall time ton 23 tf VDD ~ 30 V Duty < 1%, tw = 10 ms = 20 3/4 3/4 3/4 3/4 3/4 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd 100 52 37 15 VDD ~ 48 V, VGS = 10 V, ID = 35 A - 3/4 3/4 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 35 A, VGS = 0 V IDR = 35 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 60 81 Max 35 105 -1.7 3/4 3/4 Unit A A V ns nC Marking K3236 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-12 2SK3236 ID - VDS 20 10 8 5 4 3.75 3.5 80 100 10 8 6 5 ID - VDS Common source Tc = 25C Pulse test 4.5 16 (A) ID 12 ID Drain current (A) 60 Drain current 8 3.25 4 40 4 VGS = 3 V Common source, Tc = 25C Pulse test 0.2 0.4 0.6 0.8 1 20 3.5 VGS = 3 V 0 0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 100 25 80 Tc = -55C 1 VDS - VGS Common source Tc = 25C Pulse test (V) VDS Drain-source voltage 100 0.8 ID (A) 60 0.6 ID = 35 A 0.4 20 0.2 10 0 0 Drain current 40 20 Common source VDS = 10 V Pulse test 0 0 2 4 6 8 10 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 100 0.1 RDS (ON) - ID (S) iYfsi Tc = -55C Drain-source on resistance RDS (ON) (W) Forward transfer admittance 100 10 25 4 VGS = 10 V 0.01 Common source VDS = 10 V Pulse test 1 1 10 100 Common source Tc = 25C Pulse test 0.001 1 10 100 Drain current ID (A) Drain current ID (A) 3 2002-08-12 2SK3236 RDS (ON) - Tc 0.1 Common source 0.08 Pulse test 100 IDR - VDS (A) Drain-source on resistance RDS (ON) (W) 10 5 3 10 1 0.06 0.04 VGS = 4 V 0.02 VGS = 10 V 0 -80 -40 0 40 80 120 20 10 35 20 10 160 Drain reverse current IDR VGS = 0 V Common source Tc = 25C Pulse test 1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 100000 Common source VGS = 0 V f = 1 MHz Tc = 25C 10000 3 Vth - Tc Gate threshold voltage Vth (V) 2.5 (pF) 2 Capacitance C 1.5 Ciss 1000 1 Common source VDS = 10 V 0.5 I = 1 mA D Pulse test 0 -80 -40 0 40 80 120 160 100 0.1 Coss Crss 1 10 100 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 80 Dynamic input/output characteristics Common source ID = 35 A Tc = 25C Pulse test VDS 12 24 20 (W) (V) 40 PD VDS Drain power dissipation Drain-source voltage 40 VDD = 48 V 10 20 10 20 VGS 5 0 0 40 80 120 160 0 0 20 40 60 0 80 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-08-12 Gate-source voltage 30 VGS 60 15 (V) 2SK3236 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10 m Single pulse 100 m 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 4.16C/W 1 10 Pulse width tw (S) Safe operating area 1000 80 EAS - Tch (mJ) Avalanche energy EAS 1 ms * 100 ms * ID max (pulse) * 100 ID max (continuous) 60 40 ID (A) Drain current 10 20 DC operation Tc = 25C 1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V 1 10 100 BVDSS IAR VDD VDS Drain-source voltage VDS (V) 0V Test circuit RG = 25 W VDD = 50 V, L = 40 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-12 2SK3236 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-12 |
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